Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates

By W. Huang, T. Khan, T. Paul Chow. 2006 IEEE International Symposium on Power Semiconductor Devices and IC's, 2006

146 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/6e7e2b1a4b0168e176f01baac7f0f3aec4834eca

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Citations in the corpus

• Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate (2010, result): “7 Ω · mm in the linear region, which is relatively low compared with other results [8], [9].”
• AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications (2008, unknown): “The maximum field-effect mobility is 120 cm(2)/V · s, which is comparable with those of previously reported GaN MISFETs [19], [20], [23].”