Mark T. Bohr

Electrical and Electronic Engineering · 2000–2005

A researcher in the Science corpus: 7 papers; trusts 7 researchers and is trusted by 1 researcher here, as inferred from the citation graph.

Subfields

Whom Mark T. Bohr trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Yu Huang
  2. Xiangfeng Duan
  3. Stefan K. Lai
  4. Yi Cui
  5. Cees Dekker

Who trusts Mark T. Bohr overall

  1. George M. Whitesides
  2. Johannes Barth
  3. Babak A. Parviz

Papers from Mark T. Bohr's perspective

Ordered by how strongly the researchers Mark T. Bohr trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness
  2. Device scaling limits of Si MOSFETs and their application dependencies (Proceedings of the IEEE)
  3. OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications (International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224))
  4. Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs (IEEE International Electron Devices Meeting 2003)
  5. Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs (2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303))
  6. Ultrathin high-K gate stacks for advanced CMOS devices (International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224))
  7. Cramming More Components Onto Integrated Circuits
  8. Strained Si NMOSFETs for high performance CMOS technology (2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184))
  9. Electronics
  10. A logic nanotechnology featuring strained-silicon (IEEE Electron Device Letters)

Their papers