High Temperature Stability and the Performance Degradation of SiC MOSFETs

By Weicheng Zhou, Xueqian Zhong, Kuang Sheng. IEEE transactions on power electronics, 2014

139 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/d6f1a62fb1eca8cab0c947c0abb9d4d1921fea15

Citations in the corpus

• Degradation Assessment and Precursor Identification for SiC MOSFETs Under High Temp Cycling (2019, unknown): “bias, gate switching, and high temperature stress tests at 175 and 200 ◦C have been carried out [7], [8].”