Alessandro Paccagnella

Electrical and Electronic Engineering · 2000–2015

A researcher in the Science corpus: 6 papers; trusts 1 researcher and is trusted by 1 researcher here, as inferred from the citation graph.

Subfields

Whom Alessandro Paccagnella trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. A. Sawa

Who trusts Alessandro Paccagnella overall

  1. D. Fleetwood

Papers from Alessandro Paccagnella's perspective

Ordered by how strongly the researchers Alessandro Paccagnella trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Flash EEPROM threshold instabilities due to charge trapping during program/erase cycling (IEEE transactions on device and materials reliability)
  2. Improving Integrated Circuit Performance Through the Application of Hardness-by-Design Methodology (IEEE Transactions on Nuclear Science)
  3. Phase-change random access memory: A scalable technology (IBM Journal of Research and Development)
  4. Basic mechanisms and modeling of single-event upset in digital microelectronics
  5. Nanoscale memory elements based on solid-state electrolytes (IEEE transactions on nanotechnology)
  6. Ferroelectric thin films: Review of materials, properties, and applications
  7. NROM: A novel localized trapping, 2-bit nonvolatile memory cell (IEEE Electron Device Letters)
  8. A novel nonvolatile memory with spin torque transfer magnetization switching: spin-ram (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
  9. Conductive bridging RAM (CBRAM): an emerging non-volatile memory technology scalable to sub 20nm (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
  10. The "millipede" - nanotechnology entering data storage

Their papers