Radiation-Induced Short Channel (RISCE) and Narrow Channel (RINCE) Effects in 65 and 130 nm MOSFETs

By F. Faccio, S. Michelis, D. Cornale, Alessandro Paccagnella, Simone Gerardin. IEEE Transactions on Nuclear Science, 2015

181 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/fb2b40eed375319e6d44be3a7796d2b97f01e771

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In Electrical and Electronic Engineering

1. D. Fleetwood

Citations in the corpus

• Evolution of Total Ionizing Dose Effects in MOS Devices With Moore’s Law Scaling (2018, background): “In addition to leakage-current related failure, charge trapping in the shallow-trench-isolation (STI) of highly scaled technologies can lead to significantly larger-than-expected voltage shifts in narrow-channel devices [17],[80],[81].”