Flash EEPROM threshold instabilities due to charge trapping during program/erase cycling

By Neal R. Mielke, Hanmant Belgal, I. Kalastirsky, P. Kalavade, A. Kurtz, Qingru Meng, N. Righos, Jie Wu. IEEE transactions on device and materials reliability, 2004

176 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/0471be269c61657a210f04f17bf7d1dc5a0790b2

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In Electrical and Electronic Engineering

Citations in the corpus

Bit error rate in NAND Flash memories (2008, background): “) Prior work has identified several mechanisms that can lead to bit errors in Flash memories, including program disturb from tunneling and hot-electron injection [5][6][7][8][9], quantumlevel noise effects [10][11], erratic tunneling [12][13], SILCrelated data retention and read disturb [14][15][16]”
Data retention in MLC NAND flash memory: Characterization, optimization, and recovery (2015, background): “The electric charge trapped in the tunnel oxide can also be spontaneously de-trapped over time [19][20][21].”
Present and Future Non-Volatile Memories for Space (2010, background): “is able to perform, is limited by the generation of traps and charge trapping in the tunnel oxide during the high-field program and erase operations [41].”
Recovery Effects in the Distributed Cycling of Flash Memories (2006, methodology): “For this purpose we exploited an observation in [14] that delays towards the end of cycling should be more important than earlier ones.”
LDPC-in-SSD: making advanced error correction codes work effectively in solid state drives (2013, background): “…program/erase (P/E) cycling causes damage to the tunnel oxide of floating gate transistors in the form of charge trapping in the oxide and interface states [17] [18] [19], which directly results in threshold voltage shift and fluctuation and hence gradually degrades memory device noise margin.”
Radiation Effects in Flash Memories (2013, background): “The endurance is limited by the generation of traps and charge trapping in the tunnel oxide during the high-field program and erase operations [16].”