Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3

By Jan Schmidt, A. Merkle, R. Brendel, B. Hoex, van der Mcm Marco Sanden, W. E. Kessels. 2008

440 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/c5aff27229c473e7f2043976214764caa5e9406c

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In Electrical and Electronic Engineering

1. Jan Schmidt
2. R. Brendel
3. W. Kessels

Citations in the corpus

• High-Efficiency c-Si Solar Cells Passivated With ALD and PECVD Aluminum Oxide (2010, neutral): “Compared to similar structures [3], [6], [11], high conversion efficiencies of”
• 19%‐efficient and 43 µm‐thick crystalline Si solar cell from layer transfer using porous silicon (2012, methodology): “Our process applies aluminum oxide for surface passivation [6–8], replaces the previously used photolithography by laser contact opening with a homebuilt laser system [9], avoids high temperature oxidations, and uses an emitter contacting scheme with an AlOx tunneling layer from atomic layer deposit”