Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide

By P. Saint‐Cast, D. Kania, M. Hofmann, J. Benick, J. Rentsch, R. Preu. 2009

241 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/23b1cb78e39e9c0049182d65079f09e84d729d87

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Jan Schmidt
2. T. Dullweber

In Electrical and Electronic Engineering

1. T. Dullweber
2. Jan Schmidt

Citations in the corpus

• High-Efficiency c-Si Solar Cells Passivated With ALD and PECVD Aluminum Oxide (2010, unknown): “system is more than one order of magnitude higher than ALD techniques [13].”
• Industrial Silicon Solar Cells Applying the Passivated Emitter and Rear Cell (PERC) Concept—A Review (2016, methodology): “Al2O3 can be deposited by various techniques, such as ALD leading to the best passivation properties [13]–[15], PECVD [16], [17], inductively coupled plasma (ICP) deposition [18], [19], atmospheric pressure chemical vapor deposition”