Electronically activated boron-oxygen-related recombination centers in crystalline silicon

By K. Bothe, Jan Schmidt. 2006

338 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/ec1222ea2a977db745df09fc9b030a6e3dc2b3ce

How researchers see this paper

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In Atomic and Molecular Physics, and Optics

1. R. Falster
2. V. Voronkov
3. K. Bothe

In Electrical and Electronic Engineering

1. R. Falster
2. V. Voronkov
3. K. Bothe

Citations in the corpus

• Investigations on the long time behavior of the metastable boron–oxygen complex in crystalline silicon (2008, background): “It is also observable that the recombination active complexes become instable at elevated temperatures around 1408C in an anneal step in the dark thus making these complexes metastable.(10,11,14) This behavior of degradation and anneal can be roughly understood by a conversion of two possible states”
• Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation (2014, methodology): “Boron–oxygen defects were eliminated by storing the samples in the dark after passivation, or by performing a 10 min pre-anneal at 200 1C [39] prior to lifetime measurement.”