Fundamental boron–oxygen‐related carrier lifetime limit in mono‐ and multicrystalline silicon

By K. Bothe, R. Sinton, Jan Schmidt. 2005

303 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/9e9aaaf47374f236091d814c7627b5ce9ec4d70a

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In Atomic and Molecular Physics, and Optics

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In Electrical and Electronic Engineering

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Citations in the corpus

• A Free and Fast Three-Dimensional/Two-Dimensional Solar Cell Simulator Featuring Conductive Boundary and Quasi-Neutrality Approximations (2013, methodology): “For p-type silicon, we additionally consider the boron–oxygen Shockley–Read–Hall recombination rate as parameterized in [14].”