Effective surface passivation of crystalline silicon using ultrathin Al2O3 films and Al2O3/SiNx stacks
By Jan Schmidt, Boris Veith, R. Brendel. 2009
191 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/8c865fd3898197c6b9fd798a8353d06aae3d9fd0
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- Industrial Silicon Solar Cells Applying the Passivated Emitter and Rear Cell (PERC) Concept—A Review (2016, background): “, ultrathin Al2O3 layers tend to degrade during firing; however, a hydrogen-containing SiNx capping layer deposited by PECVD improves the firing stability considerably [61].”
- High-Efficiency c-Si Solar Cells Passivated With ALD and PECVD Aluminum Oxide (2010, unknown): “Alternatively, very thin ALD Al2O3 capped by PECVD SiNx or PECVD SiOx, which also show very good surface passivation quality [14], could be used for industrial production.”
- 19%‐efficient and 43 µm‐thick crystalline Si solar cell from layer transfer using porous silicon (2012, methodology): “We passivated the backside with 30 nm of plasma‐assisted Al2O3, deposited in a commercial ALD reactor (FlexAlTM, Oxford Instruments, Oxfordshire, UK) at a deposition temperature of 200 °C followed by a 100 nm PECVD‐SiNx capping layer deposited in a Plasmalab 80 parallel‐plate reactor (Oxford Instrum”
- Improved parameterization of Auger recombination in silicon (2012, background): “Over the last 10 years the silicon surface passivation was improved continuously, particularly aluminum oxide (Al2O3) resulted in very low surface recombination velocities below 5 cm/s [11-15].”