Wing L. Lai

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. · 2002–2004

A researcher in the Science corpus: 2 papers; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.

Whom Wing L. Lai trusts

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Jordi Suñé (in Electrical and Electronic Engineering)

Papers from Wing L. Lai's perspective

Ordered by how strongly the researchers Wing L. Lai trusts endorse each paper. Same corpus, a different order for every researcher.

  1. New physics-based analytic approach to the thin-oxide breakdown statistics (IEEE Electron Device Letters)
  2. Multiple-gate SOI MOSFETs
  3. A continuous, analytic drain-current model for DG MOSFETs
  4. Beyond the conventional transistor (IBM Journal of Research and Development)
  5. Modeling of nanoscale gate-all-around MOSFETs (IEEE Electron Device Letters)
  6. Multiple-gate SOI MOSFETs: device design guidelines
  7. Ultra-thin oxide reliability for ULSI applications
  8. Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification (2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.)
  9. A comprehensive model of PMOS NBTI degradation (Microelectronics and reliability)
  10. A critical examination of the mechanics of dynamic NBTI for PMOSFETs (IEEE International Electron Devices Meeting 2003)

Their papers