Simone Balatti

Electrical and Electronic Engineering · 2012

A researcher in the Science corpus: 2 papers; trusts 4 researchers and is trusted by 1 researcher here, as inferred from the citation graph.

Subfields

Whom Simone Balatti trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Daniele Ielmini
  2. Shimeng Yu
  3. Rainer Waser

Who trusts Simone Balatti overall

  1. Daniele Ielmini

Papers from Simone Balatti's perspective

Ordered by how strongly the researchers Simone Balatti trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Nanoionics-based resistive switching memories. (Nature Materials)
  2. Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM (2008 IEEE International Electron Devices Meeting)
  3. Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V (2007 IEEE International Electron Devices Meeting)
  4. Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory (IEEE Transactions on Electron Devices)
  5. Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films (IEEE Electron Device Letters)
  6. Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges (Advances in Materials)
  7. Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory
  8. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures. (Nature Materials)
  9. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 (Nature Materials)
  10. Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition

Their papers