On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFET's
By M. Denais, C. Parthasarathy, G. Ribes, Y. Rey-Tauriac, N. Revil, A. Bravaix, V. Huard, F. Perrier. IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004., 2004
271 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/a4188915b2df9f5caad39134c160e2798889b35b
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Citations in the corpus
- Compact Modeling of MOSFET Wearout Mechanisms for Circuit-Reliability Simulation (2008, methodology): “Quick development of NBTI testing and analyzing techniques (e.g., [ 72 ] and [73]) have helped improve our understanding of many phenomena and behaviors of NBTI effects including dynamic recovery effect [74], [75], [78], and ∆Vt(t) saturation effect [75].”
- Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability (2019, methodology): “The “on-the-fly” technique [35] also named as “nonrelaxational” [36] has been used to study BTI not only in Si but also in SiC MOSFETs [37].”