Ultrathin gate oxide reliability: physical models, statistics, and characterization

By J. Suehle. 2002

148 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/2616b8e483d37b005a3ec9b3234a7366cc75df9b

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In Electrical and Electronic Engineering

1. Jin Qin
2. Xiaojun Li
3. Joseph B. Bernstein

Citations in the corpus

• Compact Modeling of MOSFET Wearout Mechanisms for Circuit-Reliability Simulation (2008, background): “where Eox is an externally applied electric field across the dielectric (in megavolts per centimeter), γ is the field-acceleration factor (with typical value of 1.1 decade/MV/cm [ 23 ], [24]), Ea is the thermal-activation energy (Ea = 0.6−0.9 eV [1]), and B1 is a technology constant.”
• Impact of self-heating effect on long-term reliability and performance degradation in CMOS circuits (2006, background): “The experimental measurements of TBD of ultrathin gate oxides with thicknesses less than 40 Å show that the conventional E and (1/E) TBD models cannot provide the necessary accuracy for calculation and prediction [32].”