Vertical Power p-n Diodes Based on Bulk GaN

By I. Kizilyalli, A. Edwards, O. Aktas, T. Prunty, D. Bour. IEEE Transactions on Electron Devices, 2015

284 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/aa50578c246c9475325c43b79db1891f83e51ea4

How researchers see this paper

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In Condensed Matter Physics

1. Gaudenzio Meneghesso
2. Yuhao Zhang
3. Matteo Meneghini
4. Tomás Palacios
5. Enrico Zanoni
6. Michael J. Uren
7. Martin Kuball
8. Fei Fred Wang

In Electrical and Electronic Engineering

1. Yuhao Zhang
2. Tomás Palacios
3. Matteo Meneghini
4. Michael J. Uren
5. Gaudenzio Meneghesso
6. Enrico Zanoni
7. Martin Kuball
8. Fei Fred Wang

In Electronic, Optical and Magnetic Materials

1. Fei Fred Wang
2. Daniel Costinett
3. Tomás Palacios
4. Matteo Meneghini
5. Kevin J. Chen
6. Edward A. Jones Jr.
7. Enrico Zanoni
8. Gaudenzio Meneghesso

Citations in the corpus

• The 2018 GaN power electronics roadmap (2018, methodology): “15 terminations has been then demonstrated by implanting donors to compensate highly-doped p-GaN layers in vertical GaN pn diodes [49].”
• Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges (2016, methodology): “The p-n junction diodes have also been fabricated with relatively large die areas, up to 16 mm2, able to block 700 V and handle pulsed currents up to 400 A [14].”