Evaluation of the switching characteristics of a gallium-nitride transistor

By M. Danilović, Zheng Chen, R. Wang, F. Luo, Dushan Boroyevich, Paolo Mattavelli. 2011 IEEE Energy Conversion Congress and Exposition, 2011

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Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations (2017, methodology): “The eGaN FETs from EPC are usually driven at 4–5 V, considering a maximum gate voltage of 6 V [22], [27], [28].”
Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review (2012, background): “2) About the Switching Times: The use of wide bandgap semiconductors allows for the reduction of the switching time [58], [59].”
Investigation of Gallium Nitride Devices in High-Frequency LLC Resonant Converters (2017, background): “The static characteristic and switching performance of eGaN FETs and cascode GaN HEMTs were evaluated in [7]–[10], which showed ultrafast switching speed and low switching loss.”
Instability in Half-Bridge Circuits Switched With Wide Band-Gap Transistors (2014, background): “[10] also report a switching characterization effort with GaN devices that encountered selfsustained oscillation.”
Investigations of 600-V GaN HEMT and GaN Diode for Power Converter Applications (2014, methodology): “The test setup used for switching characterization, known as double pulse test (DPT) [6], [7], [9], is shown in Fig.”
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges (2016, background): “This was also shown experimentally in [32] and [63] for other GaN devices.”