Evaluation and Application of 600 V GaN HEMT in Cascode Structure

By Xiucheng Huang, Zhengyang Liu, Qiang Li, Fred C. Lee. IEEE transactions on power electronics, 2014

389 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/518f073c4ed2e6f3070cc721f2252b12ddd19cf1

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Citations in the corpus

High-Efficiency High-Power-Density LLC Converter With an Integrated Planar Matrix Transformer for High-Output Current Applications (2017, background): “The fast development of wide bandgap devices and novel magnetic materials provides opportunities to push switching frequency higher [12], [13].”
Design and Optimization of a 380–12 V High-Frequency, High-Current LLC Converter With GaN Devices and Planar Matrix Transformers (2016, background): “Emerging GaN devices offer the opportunity to further reduce the switches’ loss at high frequencies for pulse width modulation converters as well as LLC converters [5]–[7].”
Reliability and parasitic issues in GaN-based power HEMTs: a review (2016, background): “state of a cascoded HEMT is controlled by the Si transistor; for this reason, cascoded GaN HEMTs are compatible with existing commercial drivers [22].”
A Survey of EMI Research in Power Electronics Systems With Wide-Bandgap Semiconductor Devices (2020, methodology): “Although it has been presented in [4] that under zero voltage switching (ZVS), cascode GaN HEMT could reduce switching power loss, and adding a low-power MOSFET will inevitably sacrifice switching speed.”
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges (2016, background): “In [61], it was shown that two selected e-mode devices experienced lower Coss-related loss than a selected cascode with similar ratings, but higher overlap loss during”
Investigation of Gallium Nitride Devices in High-Frequency LLC Resonant Converters (2017, methodology): “The application of cascode GaN HEMTs in an LLC resonant converter was shown in [8], and a system-level consideration of using GaN HEMTs in an LLC resonant converter were qualita-”
A High-Efficiency High-Density Wide-Bandgap Device-Based Bidirectional On-Board Charger (2018, background): “For high-frequency operations, even WBG devices require a soft-switching technique due to the relatively large turn-ON loss [6], [9].”
Single-Phase T-Type Inverter Performance Benchmark Using Si IGBTs, SiC MOSFETs, and GaN HEMTs (2016, background): “Performance improvement in a synchronous buck 162 topology is presented in [12] and it is shown that smaller 163 reverse recovery charge and output capacitance of GaN HEMT 164 lead to reduction in turn-on losses and up to 2% efficiency 165 improvement in comparison to Si MOSFET.”
High-Frequency High-Efficiency GaN-Based Interleaved CRM Bidirectional Buck/Boost Converter with Inverse Coupled Inductor (2016, background): “Critical current mode (CRM) operation is the most simple and effective way to achieve ZVS, and is widely used in medium-low power applications [8], [11], [13].”
Design of GaN-based MHz totem-pole PFC rectifier (2015, methodology): “[2] Liang Zhou, and YiFeng Wu, “99% Ef Totem-Pole PFC Based on GaN HEMT http://www.transphormusa.com/sites/d tem-pole%20paper_0.pdf [3] GaN Systems, application note, “Tot GaN prototype and (b) topology single phase efficiency IONS l-phase interleaved CRM onstrated in this paper. entified and tackle”
COSS Losses in 600 V GaN Power Semiconductors in Soft-Switched, High- and Very-High-Frequency Power Converters (2018, background): “We preferred an enhancement-mode device due to prior work on losses in cascode devices in ZVS applications [19], and selected GaN Systems GS66504B HEMT [23] as the best combination of RDS,ON , COSS , and CISS for the planned family of converters.”