Accurate dependence of gallium nitride thermal conductivity on dislocation density

By C. Mion, J. Muth, E. Preble, D. Hanser. 2006

207 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/831cfe6582104a1b38aaaeb01fdd71513b093e39

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Citations in the corpus

• High Voltage Vertical GaN p-n Diodes With Avalanche Capability (2013, background): “With the low-defect density in GaN grown on bulk-GaN substrates and the lack of thermal boundaries at interfaces between dissimilar materials, the thermal conductivity of GaN is expected to approach 230 W/m K at 300 K [11].”
• Vertical Power p-n Diodes Based on Bulk GaN (2015, background): “Some of the desirable properties associated with GaN and its related alloys and heterostructures include high bandgap energy and hence low intrinsic carrier concentration (useful for high-temperature operation), favorable transport properties (large electron mobility and saturation velocity), a high”