Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

By Edward A. Jones Jr., Fei Fred Wang, Daniel Costinett. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2016

1,025 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/10b6da3bf7dfc092beea60dd6d385e2cd3b4cb84

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

In Electrical and Electronic Engineering

Citations in the corpus

A Review of Bidirectional On-Board Chargers for Electric Vehicles (2021, background): “GaN semiconductors reaches up to 650V, these devices are becoming an attractive solution for OBCs [142].”
A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability (2018, background): “The employment of a field plate on dielectric layer of the AlGaN/GaN HEMT has brought some of the most significant and exciting improvements on current collapse [129].”
A Survey of EMI Research in Power Electronics Systems With Wide-Bandgap Semiconductor Devices (2020, methodology): “Although the diodes made from the GaN material were mentioned in [2], SiC diodes are the most mature WBG diodes in industrial applications because of their relatively low material and manufacturing cost.”
ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model (2019, background): “INTRODUCTION GALLIUM nitride-based RF and power devices have gained tremendous momentum in recent years for next-generation communication [1] and power electronic applications [2].”
Dynamic on-State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses (2019, neutral): “plate [3], optimized buffer design [4], etc.”
Diamond power devices: state of the art, modelling, figures of merit and future perspective (2019, background): “While GaN and 4H-SiC devices have been successfully commercialized and also demonstrated to outperform their Si-based counterparts [4, 5], diamond and other UWBG semiconductors still face a number of challenges that are hindering the full exploitation of their superior physical properties (see table”
Wide Bandgap Devices in AC Electric Drives: Opportunities and Challenges (2019, background): “The characteristics of GaN and challenges encountered in GaN-based converter design are reviewed in [36].”
COSS Losses in 600 V GaN Power Semiconductors in Soft-Switched, High- and Very-High-Frequency Power Converters (2018, background): “Even surveys of GaN challenges at HF ignore COSS losses [20], [21].”
Electric Drive Technology Trends, Challenges, and Opportunities for Future Electric Vehicles (2021, background): “The specific ON-resistance of a unipolar active power semiconductor (e.g., MOSFETs) drift region based on different semiconductor materials is presented in Fig.”
Temperature (2019, neutral): “GaN is a promising material system with a large bandgap width [6].”
Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective (2023, methodology): “GaN power HEMTs are commercially available in the voltage classes of 15–900 V [4, 8] and have been recently demonstrated up to 10 kV [66] based on an emerging multichannel structure [67–69, 112].”