p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current
By I. Hwang, Jongseob Kim, Hyuk Soon Choi, Hyoji Choi, Jaewon Lee, K. Kim, Jong-bong Park, Jae Cheol Lee, J. Ha, Jae-joon Oh and 2 more. IEEE Electron Device Letters, 2013
245 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/ee0381133815789c1af049b45ebaf83d6dc621d0
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In Condensed Matter Physics
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Citations in the corpus
- A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability (2018, background): “The Ti/Al [85], Ni/Au [86], W [87] and so forth.”
- Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations (2017, background): “metal-p-GaN contact of the DUT is Schottky-like (rather than ohmic-like) [21], [26].”
- VTH Instability of ${p}$ -GaN Gate HEMTs Under Static and Dynamic Gate Stress (2018, unknown): “[5] I.”
- Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors (2015, methodology): “So far, there are several approaches to realize an enhancement mode operation, such as a recessed gate structure [1], [2], p-GaN gate [3]–[5], p-AlGaN gate [6], fluoride-based plasma treatment [7], the piezoneutralization layer [8], and floating charges [9], etc.”
- Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs (2018, methodology): “A Schottky contact at the p-GaN gate can be used to reduce the gate current by several orders of magnitude [6], [7].”