Defect dominated charge transport in amorphous Ta2O5 thin films

By R. Fleming, D. Lang, C. D. W. Jones, M. Steigerwald, D. Murphy, G. Alers, Y. Wong, R. B. Dover, J. Kwo, A. Sergent. 2000

215 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d72e3b476c7f047c99fcea1d2106b815e86246cb

How researchers see this paper

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In Electrical and Electronic Engineering

1. Andreas Kerber
2. Eduard A. Cartier
3. John Robertson

In Materials Chemistry

1. Andreas Kerber
2. Eduard A. Cartier

Citations in the corpus

• Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics (2003, background): “The physical origin of the defect band may be related to oxygen vacancies [9], chlorine impurities or”