Carrier transport in HfO/sub 2//metal gate MOSFETs: physical insight into critical parameters

By M. Casse, L. Thevenod, B. Guillaumot, L. Tosti, F. Martin, J. Mitard, Olivier Weber, F. Andrieu, T. Ernst, G. Reimbold and 3 more. IEEE Transactions on Electron Devices, 2006

142 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/69d1cb2554b963d989863521f099ec890a5d7c8a

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In Electrical and Electronic Engineering

1. Andreas Kerber
2. Eduard A. Cartier

Citations in the corpus

• Reliability Challenges for CMOS Technology Qualifications With Hafnium Oxide/Titanium Nitride Gate Stacks (2009, methodology): “The data showing much lower mobility numbers ([21]) were measured on nFETs fabricated in a lowtemperature process, and the mobility reduction was attributed to remote Coulomb scattering due to charges in the gate stack, possibly located at the interface between the two dielectrics [ 21 ].”