Band offsets of wide-band-gap oxides and implications for future electronic devices
By John Robertson. 2000
1,935 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/4a514f0e30b7c8107666bf1c4a6cff19f0fa613b
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In Atomic and Molecular Physics, and Optics
- Andreas Kerber
- Eduard A. Cartier
- Giorgia Longobardi
- Florin Udrea
- Julien Pernot
- Nicolas Rouger
- Sufi Zafar
- L. Black
In Electrical and Electronic Engineering
- Eduard A. Cartier
- Evgeni P. Gusev
- Arvind Kumar
- Sufi Zafar
- B. Macco
- Andreas Kerber
- David C. Gilmer
- Jimmy Melskens
In Materials Chemistry
- Andreas Kerber
- Eduard A. Cartier
- Giorgia Longobardi
- Florin Udrea
- Julien Pernot
- Nicolas Rouger
- Evgeni P. Gusev
- Nicola Donato
Citations in the corpus
- Threshold voltage instabilities in high-/spl kappa/ gate dielectric stacks (2005, background): “Section IV discusses instability under hot-carrier stressing, which is of particular concern for highdielectrics due to their reduced energy band offsets [52].”
- Diamond power devices: state of the art, modelling, figures of merit and future perspective (2019, methodology): “Experimental band gap of Al2O3 on diamond is smaller compared to the value reported by Robertson in [119].”