Luttinger liquid theory as a model of the gigahertz electrical properties of carbon nanotubes
By Peter J. Burke. 2002
625 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/222b678a538d305a7dca9f030c6490e5178d8c85
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Atomic and Molecular Physics, and Optics
- Kaustav Banerjee
- Mark S. Lundstrom
- Navin Srivastava
- Hong Li
- James D. Meindl
- A. Naeemi
- Peter J. Burke
- Jing Guo
In Materials Chemistry
- Kaustav Banerjee
- Hong Li
- Navin Srivastava
- Chuan Xu
- H. Philip Wong
- George W. Hanson
- Jie Deng
- James D. Meindl
Citations in the corpus
- Performance Modeling for Single- and Multiwall Carbon Nanotubes as Signal and Power Interconnects in Gigascale Systems (2008, background): “Physical modeling for equivalent circuits of CNTs started with [2] and later [ 3 ] in which a transmission line model was proposed for ideal SWNTs.”
- Circuit Modeling and Performance Analysis of Multi-Walled Carbon Nanotube Interconnects (2008, background): “The quantum capacitance CQ is in series with electrostatic capacitance (including shell-to-shell capacitance CS and ground capacitance CE) [13].”
- A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application—Part I: Model of the Intrinsic Channel Region (2007, background): “909030 CNT for interconnects [11], [12] in order to evaluate the po-”
- On the Applicability of Single-Walled Carbon Nanotubes as VLSI Interconnects (2009, background): “10, the expression for CE (per unit length) is given by [51]”
- Crosstalk Prediction of Single- and Double-Walled Carbon-Nanotube (SWCNT/DWCNT) Bundle Interconnects (2009, background): “example, the equivalent-circuit model of an SWCNT was developed in [6] and [7], and performance predictions of SWCNT interconnects were made, e.”
- High-Frequency Analysis of Carbon Nanotube Interconnects and Implications for On-Chip Inductor Design (2009, background): “The aforementioned derivation of CNT impedance is consistent with many theoretical or modeling works in literature [7]–[9], [12], [22].”
- Design and Performance Modeling for Single-Walled Carbon Nanotubes as Local, Semiglobal, and Global Interconnects in Gigascale Integrated Systems (2007, background): “For graphene and hence carbon nanotubes, vF = 8 × 10(5) m/s [11].”
- Compact Physics-Based Circuit Models for Graphene Nanoribbon Interconnects (2009, background): “Kinetic inductance lk represents the kinetic energy of electrons and because of small density of states in quantum wires, its value is substantially larger than the magnetic inductance [ 22 ].”
- Transport effects on signal propagation in quantum wires (2005, positive): “For metallic carbon nanotubes with four modes, two associated with each spin, Burke [11] showed that such a model predicts the correct spin wave velocities in addition to the charge wave velocity.”
- Performance comparison between carbon nanotube and copper interconnects for gigascale integration (GSI) (2005, background): “The results offer important guidance regarding the nature of carbon nanotube technology development needed for improving interconnect performance.”
- Quantitative theory of nanowire and nanotube antenna performance (2004, methodology): “Finally, we derive an integral equation (analogous to Hallen’s integral equation) which outlines a general 1536-125X/$20.00 © 2006 IEEE technique for more precise numerical calculations of nanotube antenna performance.”
- Graphene Terahertz Plasmon Oscillators (2007, background): “like in the case of carbon nanotubes [20], [21], the expression for the kinetic inductance in graphene is frequency and wavevector dependent.”
- An RF circuit model for carbon nanotubes (2002, positive): “In reference [ 11 ], we show that the circuit model of Fig. 1 is still valid as an effective circuit model for the charged mode if the kinetic inductance and quantum capacitance (but not the electrostatic capacitance) are simply divided by four.”
- Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status, and Prospects (2009, methodology): “Assuming that the additional quantum energy required to add charge δQ to these higher energy states is eδV , following traditional capacitance definition, quantum capacitance can be modeled as [113]–[116]:”
- Performance analysis of carbon nanotube interconnects for VLSI applications (2005, methodology): “In addition to this magnetic inductance (LM), the kinetic inductance is calculated in [17] (following [26]) by equating the kinetic energy stored in each conducting channel of the CNT to an effective inductance.”