Overview and status of metal S/D Schottky-barrier MOSFET technology

By J. Larson, John P. Snyder. IEEE Transactions on Electron Devices, 2006

472 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/d4b48b2d7006fe848e197ef1016d4c559b05954f

How researchers see this paper

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In Atomic and Molecular Physics, and Optics

1. Kelin J. Kuhn

In Electrical and Electronic Engineering

1. Kelin J. Kuhn
2. Mamidala Jagadesh Kumar
3. K. Nadda
4. Bevan M. Baas
5. Aaron Stillmaker
6. Qiang Li
7. Kei May Lau

Citations in the corpus

• The Charge Plasma P-N Diode (2008, background): “For the 1-μm-thick SOI layer, the depletion charge is clearly present [Fig.”
• Fabrication and Characterization of the Charge-Plasma Diode (2010, background): “fabrication-related issues and produce performance specifications comparable with conventional diodes [9], [10].”
• Considerations for Ultimate CMOS Scaling (2012, background): “ing option when near-band-edge Schottky metal solutions are identified [10].”