Metal‐Semiconductor Contacts
By S. M. Sze, K. Ng. 2006
1,113 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/00153564648030240bf5ddba87e9517ec2f830a7
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In Electrical and Electronic Engineering
Citations in the corpus
- Energetics of metal–organic interfaces: New experiments and assessment of the field (2009, background): “A huge number of investigations on this topic, focusing mainly on inorganic semiconductor interfaces, date back to the 1970–1990s and have been reviewed in many comprehensive articles and books [38,39,53,54].”
- Piezotronics and piezo-phototronics – From single nanodevices to array of devices and then to integrated functional system (2013, background): “When metal and semiconductor come into contact, a significant redistribution of charge takes place due to the overlap of wave functions from both the metal and semiconductor [31,32].”
- Fundamental theories of piezotronics and piezo-phototronics (2015, background): “For a reversely biased n-type Schottky contact, the thermionic field emission (TFE) theory better described the behavior of heavily doped semiconductor materials with considering the tunneling effect [21,29].”
- The Charge Plasma P-N Diode (2008, background): “In practice, metals such as aluminum for the cathode and, e.g., platinum or nickel for the anode could be adopted [12].”
- Nanoscale Transistors: Device Physics, Modeling and Simulation (2005, result): “If we did so, our result would be analogous to the well-known Bethe condition for thermionic emission in a metal-semiconductor diode [13].”
- Current progress and future challenges in thermoelectric power generation: From materials to devices (2015, background): “The specific contact resistivity of the ohmic contact should be small [182].”
- C 1s Peak of Adventitious Carbon Aligns to the Vacuum Level: Dire Consequences for Material's Bonding Assignment by Photoelectron Spectroscopy (2017, background): “Such contacts remain within the Schottky–Mott limit, in which the electronic levels of the adsorbate are determined by the work function of the substrate.([26]) As a matter of fact, the process of AdC adsorption is also classified as physical,([18]) because the principal species (hydrocarbons) are n”
- Overview and status of metal S/D Schottky-barrier MOSFET technology (2006, background): “The thermal-emission current can be determined by classical thermal-emission theory [39]:”