Phase change memory
By Jing Li, Chung Hon Lam. Science China Information Sciences, 2011
893 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/ab992b1d7ea296b3bc3a1d3b496d10447d00a789
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
- Onur Mutlu
- Shimeng Yu
- Pai-Yu Chen
- H. Philip Wong
- Jeremie S. Kim
- Abu Sebastian
- Saugata Ghose
- Mahmut Taylan Kandemir
In Materials Chemistry
- Shimeng Yu
- Onur Mutlu
- Pai-Yu Chen
- H. Philip Wong
- Abu Sebastian
- Geoffrey W. Burr
- Chung Hon Lam
- Jie Deng
Citations in the corpus
- Phase-Change Memory—Towards a Storage-Class Memory (2017, background): “Sub-10-nm feature-size devices, high-density 4–6 F2 structures, multiple stable resistance states, and low power/reset current density 1 MA/cm2 are all necessary to improve the overall density.”
- Evaluating STT-RAM as an energy-efficient main memory alternative (2013, result): “However, it is both much slower (about 2-4X read, 10-100X write) and much more power hungry (about 2-4X read, 10-50X write), compared to DRAM [30], [50], [55], [61].”
- RowHammer: A Retrospective (2019, background): “[202], [204], [245], [253], [254], [259], STT-MRAM [61], [137], and RRAM/ReRAM/memristors [246] are likely to exhibit similar and perhaps even more exacerbated reliability”
- Memory scaling: A systems architecture perspective (2013, background): “Yet, row buffer misses are much more costly in terms of latency, bandwidth, and energy in PCM than in DRAM.”
- Recent Progress in Phase-Change Memory Technology (2016, background): “P HASE-CHANGE memory (PCM) is enabled by the large resistance contrast between the amorphous and crystalline states in phase-change materials [1]–[3].”
- Error Characterization, Mitigation, and Recovery in Flash-Memory-Based Solid-State Drives (2017, background): “Emerging nonvolatile memories, such as phase-change memory (PCM) [97–99, 159, 192, 204, 208], spin-transfer torque magnetic RAM (STT-RAM or STT-MRAM) [96, 140], metal-oxide resistive RAM (RRAM) [191], and memristors [39, 171], are expected to bridge the gap between DRAM and SSDs, providing…”
- Emerging Memory Technologies: Recent Trends and Prospects (2016, methodology): “The emerging NVM candidates include STT-MRAM [2], PCRAM [3], and RRAM [4].”