Flip-N-Write: A simple deterministic technique to improve PRAM write performance, energy and endurance

By Sangyeun Cho, Hyunjin Lee. Micro, 2009

564 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Hardware and Architecture, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/9bb4d2a0bcdbc9ca15c2ecbaf0a8153b61a420a2

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Shimeng Yu
2. Yuan Xie
3. Zhang Tao
4. Rajeev Balasubramonian
5. Ricardo Bianchini
6. Eugene Gorbatov
7. Naveen Muralimanohar
8. Luiz E. Ramos

In Hardware and Architecture

1. Rajeev Balasubramonian
2. Naveen Muralimanohar
3. Yuan Xie
4. Cong Xu
5. Ricardo Bianchini
6. Eugene Gorbatov
7. Dimin Niu
8. Luiz E. Ramos

In Materials Chemistry

1. Zhang Tao
2. Ricardo Bianchini
3. Eugene Gorbatov
4. Luiz E. Ramos
5. Shimeng Yu

Citations in the corpus

• Page placement in hybrid memory systems (2011, methodology): “Until then, our system can be easily combined with previously proposed endurance-improvement techniques [8, 18, 20, 38].”
• Overcoming the challenges of crossbar resistive memory architectures (2015, methodology): “While some recent prototypes of ReRAM are optimized for density trading off latency (e.g., a 32 Gb part from SanDisk [24] targeted as flash replacement), the technology can also be leveraged to build low latency memories.”