Martin Salinga

Electrical and Electronic Engineering · 2006–2015

A researcher in the Science corpus: 8 papers; trusts 2 researchers and is trusted by 1 researcher here, as inferred from the citation graph.

Subfields

• Electrical and Electronic Engineering — 74 citations into it; #15,664 of 16,539 by trust here, #4,472 by citations
• Materials Chemistry — 61 citations into it; #10,469 of 11,513 by trust here, #4,389 by citations
• Polymers and Plastics — 24 citations into it

Whom Martin Salinga trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Matthias Wuttig
2. N. Yamada

Who trusts Martin Salinga overall

1. Simone Raoux

Papers from Martin Salinga's perspective

Ordered by how strongly the researchers Martin Salinga trusts endorse each paper. Same corpus, a different order for every researcher.

1. Understanding the phase-change mechanism of rewritable optical media (Nature Materials)
2. Structure of laser-crystallized Ge2Sb2+xTe5 sputtered thin films for use in optical memory
3. Phase-change materials for rewriteable data storage. (Nature Materials)
4. Electrons in disordered structures
5. Recovery and Drift Dynamics of Resistance and Threshold Voltages in Phase-Change Memories (IEEE Transactions on Electron Devices)
6. AND T
7. Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials (IEEE Transactions on Electron Devices)
8. Overview of Phase-Change Chalcogenide Nonvolatile Memory Technology
9. Resonant bonding in crystalline phase-change materials. (Nature Materials)
10. Models for phase-change of Ge2Sb2Te5 in optical and electrical memory devices

Their papers

• Phase-change random access memory: A scalable technology (2008) — 1,014 citations
• Ultra-Thin Phase-Change Bridge Memory Device Using GeSb (2006) — 171 citations
• Physics of the Switching Kinetics in Resistive Memories (2015) — 262 citations
• Phase change materials and their application to random access memory technology (2008) — 151 citations
• Threshold field of phase change memory materials measured using phase change bridge devices (2009) — 146 citations
• Nanosecond switching in GeTe phase change memory cells (2009) — 429 citations
• A map for phase-change materials. (2008) — 684 citations
• Nanosecond threshold switching of GeTe6 cells and their potential as selector devices (2012) — 138 citations