J. Birbeck

IEEE Electron Device Letters · 2002

A researcher in the Science corpus: 1 paper; trusts 1 researcher and is trusted by 1 researcher here, as inferred from the citation graph.

Whom J. Birbeck trusts

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Martin Kuball (in Condensed Matter Physics)

Who trusts J. Birbeck

  1. David L. Blackburn (in Electrical and Electronic Engineering)

Papers from J. Birbeck's perspective

Ordered by how strongly the researchers J. Birbeck trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control
  2. 99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors (Applied Power Electronics Conference)
  3. Punch-through in short-channel AlGaN/GaN HFETs (IEEE Transactions on Electron Devices)
  4. Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
  5. Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV
  6. Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures (Science)
  7. 30-W/mm GaN HEMTs by field plate optimization (IEEE Electron Device Letters)
  8. Thermal boundary resistance predictions from molecular dynamics simulations and theoretical calculations
  9. A Bidirectional-Switch-Based Wide-Input Range High-Efficiency Isolated Resonant Converter for Photovoltaic Applications (IEEE transactions on power electronics)
  10. Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy

Their papers