B. T. Hughes
Condensed Matter Physics · 2002–2003
A researcher in the Science corpus: 2 papers; trusts 1 researcher and is trusted by 1 researcher here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 5 citations into it; #1,745 of 1,948 by trust here, #840 by citations
- Electrical and Electronic Engineering — 5 citations into it; #15,031 of 16,539 by trust here, #9,011 by citations
Whom B. T. Hughes trusts
Their strongest outbound trust, strongest first, inferred from their citations.
- Martin Kuball (in Electrical and Electronic Engineering)
Who trusts B. T. Hughes
- David L. Blackburn (in Electrical and Electronic Engineering)
Papers from B. T. Hughes's perspective
Ordered by how strongly the researchers B. T. Hughes trusts endorse each paper. Same corpus, a different order for every researcher.
- Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control
- 99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors (Applied Power Electronics Conference)
- Punch-through in short-channel AlGaN/GaN HFETs (IEEE Transactions on Electron Devices)
- Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
- Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV
- Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures (Science)
- 30-W/mm GaN HEMTs by field plate optimization (IEEE Electron Device Letters)
- Thermal boundary resistance predictions from molecular dynamics simulations and theoretical calculations
- A Bidirectional-Switch-Based Wide-Input Range High-Efficiency Isolated Resonant Converter for Photovoltaic Applications (IEEE transactions on power electronics)
- Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy