L. Madhav
Electrical and Electronic Engineering · 2007
A researcher in the Science corpus: 1 paper; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 10 citations into it
Whom L. Madhav trusts
Their strongest outbound trust, strongest first, inferred from their citations.
- M. A. Alam (in Electrical and Electronic Engineering)
Papers from L. Madhav's perspective
Ordered by how strongly the researchers L. Madhav trusts endorse each paper. Same corpus, a different order for every researcher.
- Material dependence of hydrogen diffusion: implications for NBTI degradation (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
- A comprehensive framework for predictive modeling of negative bias temperature instability (2004 IEEE International Reliability Physics Symposium. Proceedings)
- A comprehensive model of PMOS NBTI degradation (Microelectronics and reliability)
- Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification (2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.)
- Universal recovery behavior of negative bias temperature instability [PMOSFETs] (IEEE International Electron Devices Meeting 2003)
- Analysis of NBTI Degradation- and Recovery-Behavior Based on Ultra Fast VT-Measurements (2006 IEEE International Reliability Physics Symposium Proceedings)
- Investigation and modeling of interface and bulk trap generation during negative bias temperature instability of p-MOSFETs (IEEE Transactions on Electron Devices)
- Influence of cultivation temperature on the ligninolytic activity of selected fungal strains
- Impact of NBTI on the temporal performance degradation of digital circuits (IEEE Electron Device Letters)
- Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing