D. Varghese
Electrical and Electronic Engineering · 2007
A researcher in the Science corpus: 1 paper; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 10 citations into it
Whom D. Varghese trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Papers from D. Varghese's perspective
Ordered by how strongly the researchers D. Varghese trusts endorse each paper. Same corpus, a different order for every researcher.
- A comprehensive framework for predictive modeling of negative bias temperature instability (2004 IEEE International Reliability Physics Symposium. Proceedings)
- Material dependence of hydrogen diffusion: implications for NBTI degradation (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
- A comprehensive model of PMOS NBTI degradation (Microelectronics and reliability)
- Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification (2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.)
- Universal recovery behavior of negative bias temperature instability [PMOSFETs] (IEEE International Electron Devices Meeting 2003)
- Analysis of NBTI Degradation- and Recovery-Behavior Based on Ultra Fast VT-Measurements (2006 IEEE International Reliability Physics Symposium Proceedings)
- Investigation and modeling of interface and bulk trap generation during negative bias temperature instability of p-MOSFETs (IEEE Transactions on Electron Devices)
- Influence of cultivation temperature on the ligninolytic activity of selected fungal strains
- Impact of NBTI on the temporal performance degradation of digital circuits (IEEE Electron Device Letters)
- Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing