1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes With an Ultra-Low Leakage Current Below $1~\mu$ A/cm2

By Xing Lu, Xianda Zhou, Huaxing Jiang, K. Ng, Zimin Chen, Y. Pei, Kei May Lau, Gang Wang. IEEE Electron Device Letters, 2020

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High performance NiO/<inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga₂O₃ heterojunction pn diodes were realized by applying a sputtered p-type NiO film onto a lightly doped n-type <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga₂O₃ epitaxial layer. Taking advantage of the high barrier height against carriers within the pn heterojunction, the demonstrated device exhibited a high breakdown voltage (<inline-formula> <tex-math notation="LaTeX">${V}_{B}{)}$ </tex-math></inline-formula> of 1059 V without optimized electric field management techniques, and before breakdown the reverse leakage current density remained below <inline-formula> <tex-math notation="LaTeX">$1~\mu \text{A}$ </tex-math></inline-formula>/cm². Simultaneously, a relatively low specific on-resistance (<inline-formula> <tex-math notation="LaTeX">$R_{\text {on, sp}}{)}$ </tex-math></inline-formula> of 3.5 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega \cdot \text {cm}^{{2}}$ </tex-math></inline-formula> was achieved. The built-in potential of the heterojunction that determined by a capacitance-voltage (<inline-formula> <tex-math notation="LaTeX">${C}$ </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula>) measurement was around 2.4 eV. As discussed in terms of the energy band diagram of a type-II heterojunction, the conduction band and valence band offsets at the NiO/<inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga₂O₃ hetero-interface were estimated to be 1.2 and 2.3 eV, respectively.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment

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