T. Fujishima

Condensed Matter Physics · 2008–2014

A researcher in the Science corpus: 3 papers; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

Whom T. Fujishima trusts

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Frank Schwierz (in Electrical and Electronic Engineering)

Papers from T. Fujishima's perspective

Ordered by how strongly the researchers T. Fujishima trusts endorse each paper. Same corpus, a different order for every researcher.

  1. GaN Power Transistors on Si Substrates for Switching Applications (Proceedings of the IEEE)
  2. Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors (IEEE Transactions on Electron Devices)
  3. High Voltage Vertical GaN p-n Diodes With Avalanche Capability (IEEE Transactions on Electron Devices)
  4. Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device
  5. Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers (IEEE Electron Device Letters)
  6. Planar Nearly Ideal Edge-Termination Technique for GaN Devices (IEEE Electron Device Letters)
  7. Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaN p-n junction diodes
  8. Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N∕GaN grown by molecular-beam epitaxy
  9. Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking (IEEE Electron Device Letters)
  10. An electron mobility model for wurtzite GaN

Their papers