Feng Gao
Condensed Matter Physics · with Fujishima · 2013
A researcher in the Science corpus: 1 paper; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 7 citations into it
- Electrical and Electronic Engineering — 6 citations into it
Whom Feng Gao trusts
Their strongest outbound trust, strongest first, inferred from their citations.
- Frank Schwierz (in Electrical and Electronic Engineering)
Papers from Feng Gao's perspective
Ordered by how strongly the researchers Feng Gao trusts endorse each paper. Same corpus, a different order for every researcher.
- Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers (IEEE Electron Device Letters)
- Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device
- GaN Power Transistors on Si Substrates for Switching Applications (Proceedings of the IEEE)
- An electron mobility model for wurtzite GaN
- Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates
- Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy
- Record RF performance of 45-nm SOI CMOS Technology (2007 IEEE International Electron Devices Meeting)
- The origins and limits of metal-graphene junction resistance. (Nature Nanotechnology)
- Mobility and Saturation Velocity in Graphene on SiO2
- Micrometer-scale ballistic transport in encapsulated graphene at room temperature. (Nano letters (Print))