Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices

By Chunhua Zhou, Q. Jiang, Sen Huang, Kevin J. Chen. IEEE Electron Device Letters, 2012

169 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/36605ee96ffa29368f68cf33a1166175c4eb8179

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Yuhao Zhang
2. Tomás Palacios
3. Min-Chul Sun
4. Daniel Piedra
5. T. Fujishima

In Electrical and Electronic Engineering

1. Yuhao Zhang
2. Tomás Palacios
3. Min-Chul Sun
4. Daniel Piedra
5. T. Fujishima

Citations in the corpus

• GaN-on-Si Vertical Schottky and p-n Diodes (2014, background): “Such behavior can be modeled by a space-charge-limited current (SCLC) conduction mechanism with traps [9].”