Instability in Half-Bridge Circuits Switched With Wide Band-Gap Transistors

By A. Lemmon, M. Mazzola, J. Gafford, C. Parker. IEEE transactions on power electronics, 2014

151 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/c7026ed5699a70327927e5b65cb6d85fd0fc6cb6

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In Electrical and Electronic Engineering

1. Shuo Wang
2. Boyi Zhang
3. Alejandro G. Yepes
4. J. Doval‐Gandoy
5. Emil Levi

Citations in the corpus

• A Survey of EMI Research in Power Electronics Systems With Wide-Bandgap Semiconductor Devices (2020, background): “17(b) [109], where the parasitic inductance of power loop is Ld , and GEP is the effective power loop conductance.”
• Modeling and Analysis of SiC MOSFET Switching Oscillations (2016, background): “However, the distinct fast switching characteristics of SiC MOSFETs have led to undesirable voltage and current oscillations during turn-ON and turn-OFF switching [6], [7].”
• Wide Bandgap Devices in AC Electric Drives: Opportunities and Challenges (2019, background): “Significant research efforts are reported for designing high performance gate drivers [23]-[27], for analyzing the effects of the parasitic inductance and capacitance on the converter performance [28]-[31], for integrating the gate driver and the SiC MOSFET inside the module to minimize the gate-sou”