Comparison of GaN HEMTs on Diamond and SiC Substrates

By J. Felbinger, M. Chandra, Yunju Sun, L. F. Eastman, J. Wasserbauer, F. Faili, D. Babic, D. Francis, F. Ejeckam. IEEE Electron Device Letters, 2007

154 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/4bc1607897dcd4547d6ca2c3190034b5e3e39edd

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1. Miguel Rodriguez
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Citations in the corpus

• High-Frequency PWM Buck Converters Using GaN-on-SiC HEMTs (2014, background): “GaN-on-SiC HEMT technology is being widely used in radio frequency power amplifiers (RFPAs) due to its higher current density and wattage per unit of die size, which leads to high power handling capabilities and high transition frequencies [7]–[9].”
• A review of GaN HEMT broadband power amplifiers (2020, unknown): “A comparative analysis of GaN on SiC and GaN on Diamond technologies is given in [193].”