Jason C. S. Woo
Electrical and Electronic Engineering · 2008–2013
A researcher in the Science corpus: 3 papers; trusts 2 researchers and is trusted by 7 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 27 citations into it; #4,930 of 16,539 by trust here, #8,802 by citations
Whom Jason C. S. Woo trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Jason C. S. Woo overall
Papers from Jason C. S. Woo's perspective
Ordered by how strongly the researchers Jason C. S. Woo trusts endorse each paper. Same corpus, a different order for every researcher.
- Lateral interband tunneling transistor in silicon-on-insulator
- Vertical tunnel field-effect transistor (IEEE Transactions on Electron Devices)
- Low-subthreshold-swing tunnel transistors (IEEE Electron Device Letters)
- Germanium-source tunnel field effect transistors with record high ION/IOFF (Symposium on VLSI Technology)
- Steep Subthreshold Slope n- and p-Type Tunnel-FET Devices for Low-Power and Energy-Efficient Digital Circuits (IEEE Transactions on Electron Devices)
- The Tunnel Source (PNPN) n-MOSFET: A Novel High Performance Transistor (IEEE Transactions on Electron Devices)
- FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
- Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope (2008 IEEE International Electron Devices Meeting)
- Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions (IEEE Electron Device Letters)
- Effect of Pocket Doping and Annealing Schemes on the Source-Pocket Tunnel Field-Effect Transistor (IEEE Transactions on Electron Devices)
Their papers
- The Tunnel Source (PNPN) n-MOSFET: A Novel High Performance Transistor (2008) — 327 citations
- Effect of Pocket Doping and Annealing Schemes on the Source-Pocket Tunnel Field-Effect Transistor (2011) — 267 citations
- Improved Subthreshold and Output Characteristics of Source-Pocket Si Tunnel FET by the Application of Laser Annealing (2013) — 140 citations