Wet etching of GaN, AlN, and SiC : a review

By D. Zhuang, J. Edgar. 2005

770 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/9dcc254cc526f97faf8057c2a92d12e51054ee94

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Kevin J. Chen
2. Tohru Oka
3. T. Nozawa
4. Umesh K. Mishra

In Electrical and Electronic Engineering

1. Kevin J. Chen
2. Kei May Lau
3. Umesh K. Mishra

Citations in the corpus

• Gallium Nitride as an Electromechanical Material (2014, methodology): “Besides patterning of GaN, some other applications of wet etching include surface treatment, defect decoration, polarity identification by producing characteristic pits or hillocks, and device fabrication on smooth surfaces [83].”
• Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode (2006, background): “However, the ICP dry etching has a low etch selectivity between materials and causes subsurface damages [21].”