Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride

By S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo, Y. Sano. 2004

229 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/cd6b4023b5b9315be6a361a121ee3f8a0adc7913

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In Condensed Matter Physics

1. Kevin J. Chen
2. Tohru Oka
3. T. Nozawa
4. Umesh K. Mishra

In Electrical and Electronic Engineering

1. Kevin J. Chen
2. Kei May Lau
3. Umesh K. Mishra

In Materials Chemistry

1. Kevin J. Chen
2. Tohru Oka
3. T. Nozawa

Citations in the corpus

• Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode (2006, background): “layer, which may change the stress in the AlGaN layer and alter the piezoelectric polarization [28], [29].”