Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors

By E. J. Miller, X. Dang, E. Yu. 2000

198 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/0bb28f739fa48935a924a5c3daf0fd29372bc5d8

How researchers see this paper

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In Condensed Matter Physics

1. Kevin J. Chen
2. Tohru Oka
3. T. Nozawa
4. Umesh K. Mishra

In Electrical and Electronic Engineering

1. Kevin J. Chen
2. Kei May Lau
3. Umesh K. Mishra

Citations in the corpus

• Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs (2008, background): “reducing trap-assisted tunneling through the passivation of surface traps underneath and near the gate contact [11].”
• Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode (2006, background): “dominated by the TE mechanism but other mechanisms, such as vertical tunneling [38], surface barrier thinning [39], and”