Mechanism of the reverse gate leakage in AlGaN/GaN high electron mobility transistors

By Shreepad Karmalkar, D. M. Sathaiya, Michael S. Shur. 2003

139 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/b0f5f43eec5a82a9219b8545d7cd2a781992f781

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Kevin J. Chen
2. Tohru Oka
3. T. Nozawa
4. Umesh K. Mishra

In Electrical and Electronic Engineering

1. Kevin J. Chen
2. Kei May Lau
3. Umesh K. Mishra

Citations in the corpus

• Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode (2006, background): “…theoretically predicted values and very large ideality factors (> 2.4) indicates that the gate currents of fabricated AlGaN/GaN HEMTs are not dominated by the TE mechanism but other mechanisms, such as vertical tunneling [38], surface barrier thinning [39], and trap-assisted tunneling [40], etc.”