Guide to references on III-V semiconductor chemical etching

By A. Clawson. 2001

185 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/1d77318231cac756771dbe8e84dcf03c2499bb00

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Mircea Guina
2. P. Kuyanov
3. Antti Härkönen
4. A. Rantamäki

In Biomedical Engineering

1. P. Kuyanov
2. Kei May Lau

In Electrical and Electronic Engineering

1. Kevin J. Chen
2. Mircea Guina
3. P. Kuyanov
4. Kei May Lau
5. Antti Härkönen
6. A. Rantamäki
7. Umesh K. Mishra

Citations in the corpus

• III–V nanowire photovoltaics: Review of design for high efficiency (2013, methodology): “For electrical contacting, a passivating shell can be locally removed mechanically [154] or by plasma or wet etching technology using published recipes [156].”
• A review of III–V nanowire infrared photodetectors and sensors (2017, unknown): “techniques using published recipes [77].”
• Optically pumped VECSELs: review of technology and progress (2017, background): “For InP-based structures, the etchants are often based on HCl [44], which may limit or hinder the use of indium solder for flip-chip bonding.”
• Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode (2006, background): “GaAs- and InP-based HEMTs, there are sufficient highly selective chemical wet-etching recipes [14] that can be applied to recess etching.”