Xiaoping Liang
Electrical and Electronic Engineering · 2004–2019
A researcher in the Science corpus: 4 papers; trusts 1 researcher and is trusted by 3 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 51 citations into it; #8,712 of 16,539 by trust here, #11,641 by citations
Whom Xiaoping Liang trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Xiaoping Liang overall
Papers from Xiaoping Liang's perspective
Ordered by how strongly the researchers Xiaoping Liang trusts endorse each paper. Same corpus, a different order for every researcher.
- Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs
- An analytical solution to a double-gate MOSFET with undoped body
- Device scaling limits of Si MOSFETs and their application dependencies (Proceedings of the IEEE)
- Scaling challenges and device design requirements for high performance sub-50 nm gate length planar CMOS transistors (2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104))
- Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs (IEEE Electron Device Letters)
- On the performance limits for Si MOSFETs: a theoretical study
- Multiple-gate SOI MOSFETs
- A continuous, analytic drain-current model for DG MOSFETs
- A 2-D analytical solution for SCEs in DG MOSFETs
- Explicit Continuous Models for Double-Gate and Surrounding-Gate MOSFETs (IEEE Transactions on Electron Devices)
Their papers
- A continuous, analytic drain-current model for DG MOSFETs (2004) — 299 citations
- A 2-D analytical solution for SCEs in DG MOSFETs (2004) — 159 citations
- Self‐Healable Multifunctional Electronic Tattoos Based on Silk and Graphene (2019) — 313 citations
- Advanced carbon materials for flexible and wearable sensors (2017) — 192 citations