Bo Yu

Electrical and Electronic Engineering · with Taur · 2007–2008

A researcher in the Science corpus: 2 papers; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

• Electrical and Electronic Engineering — 18 citations into it

Whom Bo Yu trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. David Jiménez
2. Jean-Pierre Colinge
3. Yuan Taur
4. H. A. Hamid
5. Xiaoping Liang

Papers from Bo Yu's perspective

Ordered by how strongly the researchers Bo Yu trusts endorse each paper. Same corpus, a different order for every researcher.

1. Continuous analytic I-V model for surrounding-gate MOSFETs (IEEE Electron Device Letters)
2. Multiple-gate SOI MOSFETs
3. Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs (IEEE Electron Device Letters)
4. Explicit continuous model for long-channel undoped surrounding gate MOSFETs (IEEE Transactions on Electron Devices)
5. Device scaling limits of Si MOSFETs and their application dependencies (Proceedings of the IEEE)
6. A continuous, analytic drain-current model for DG MOSFETs
7. High performance 5nm radius Twin Silicon Nanowire MOSFET (TSNWFET) : fabrication on bulk si wafer, characteristics, and reliability (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
8. High Performance Silicon Nanowire Field Effect Transistors
9. Analytical Model of the Threshold Voltage and Subthreshold Swing of Undoped Cylindrical Gate-All-Around-Based MOSFETs (IEEE Transactions on Electron Devices)
10. Quantum-mechanical effects on the threshold voltage of undoped double-gate MOSFETs (IEEE Electron Device Letters)

Their papers

• Scaling of Nanowire Transistors (2008) — 147 citations
• Explicit Continuous Models for Double-Gate and Surrounding-Gate MOSFETs (2007) — 148 citations