A 2-D analytical solution for SCEs in DG MOSFETs

By Xiaoping Liang, Yuan Taur. 2004

159 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/233f6b2943a7dc1ef4a762762994399a0b3a3a00

How researchers see this paper

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In Electrical and Electronic Engineering

1. Qian Xie
2. Jun Xu
3. Yuan Taur
4. Kaushik Roy
5. Jae-Joon Kim

Citations in the corpus

• Review and Critique of Analytic Models of MOSFET Short-Channel Effects in Subthreshold (2012, methodology): “approach but using the two-region model, the double integral has been evaluated for both double-gate [26] and extreme retrograde doped MOSFETs [27].”