Qian Xie

IEEE Transactions on Electron Devices · 2012

A researcher in the Science corpus: 1 paper; trusts 2 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Whom Qian Xie trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Xiaoping Liang
  2. Yuan Taur

Papers from Qian Xie's perspective

Ordered by how strongly the researchers Qian Xie trusts endorse each paper. Same corpus, a different order for every researcher.

  1. A 2-D analytical solution for SCEs in DG MOSFETs
  2. Explicit Continuous Models for Double-Gate and Surrounding-Gate MOSFETs (IEEE Transactions on Electron Devices)
  3. Device scaling limits of Si MOSFETs and their application dependencies (Proceedings of the IEEE)
  4. Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs
  5. An analytical solution to a double-gate MOSFET with undoped body
  6. Multiple-gate SOI MOSFETs
  7. A continuous, analytic drain-current model for DG MOSFETs
  8. Explicit continuous model for long-channel undoped surrounding gate MOSFETs (IEEE Transactions on Electron Devices)
  9. Continuous analytic I-V model for surrounding-gate MOSFETs (IEEE Electron Device Letters)
  10. High performance 5nm radius Twin Silicon Nanowire MOSFET (TSNWFET) : fabrication on bulk si wafer, characteristics, and reliability (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)

Their papers